FDMC7672S

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FDMC7672S

Manufacturer part number:FDMC7672S

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 6m Ω @ 14.8A, 10V ±20V 2520pF @ 15V 42nC @ 10V 8-PowerWDFN

Case Package:SOT-23

Datasheet:FDMC7672S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 6 days ago)
Factory Lead Time	23 Weeks
Contact Plating	Gold
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Number of Pins	8
Weight	200mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®, SyncFET™
Published	2010
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Additional Feature	ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
JESD-30 Code	S-PDSO-N5
Number of Elements	1
Power Dissipation-Max	2.3W Ta 36W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	36W
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6m Ω @ 14.8A, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2520pF @ 15V
Current - Continuous Drain (Id) @ 25°C	14.8A Ta 18A Tc
Gate Charge (Qg) (Max) @ Vgs	42nC @ 10V
Rise Time	4ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	18A
Threshold Voltage	1.6V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.006Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	45A
Avalanche Energy Rating (Eas)	60 mJ
Nominal Vgs	1.6 V
Height	750μm
Length	3.3mm
Width	3.3mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free