IPD25N06S240ATMA1

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Manufacturer part number:IPD25N06S240ATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 55V 29A TO252-3

Case Package:SOT-23

Datasheet:IPD25N06S240ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	OptiMOS™
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	68W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	8 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	40m Ω @ 13A, 10V
Vgs(th) (Max) @ Id	4V @ 26μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	513pF @ 25V
Current - Continuous Drain (Id) @ 25°C	29A Tc
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Rise Time	20ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	19 ns
Turn-Off Delay Time	18 ns
Continuous Drain Current (ID)	29A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	55V
Drain-source On Resistance-Max	0.04Ohm
Pulsed Drain Current-Max (IDM)	116A
Avalanche Energy Rating (Eas)	80 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead