IPD30N10S3L34ATMA1

new-10%

Manufacturer part number:IPD30N10S3L34ATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 100V 30A Automotive 3-Pin(2+Tab) TO-252

Case Package:SOT-23

Datasheet:IPD30N10S3L34ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	57W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	57W
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	31m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.4V @ 29μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	1976pF @ 25V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	31nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	30A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	100V
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead