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IPD50R500CEATMA1

IPD50R500CEATMA1

IPD50R500CEATMA1

Infineon Technologies

MOSFET N-Ch 500V 24A DPAK-2

SOT-23

IPD50R500CEATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package PG-TO252-3
Weight 3.949996g
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series CoolMOS™ CE
Part Status Discontinued
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 57W Tc
Element Configuration Single
Power Dissipation 57W
Turn On Delay Time 6 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 500mOhm @ 2.3A, 13V
Vgs(th) (Max) @ Id 3.5V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 433pF @ 100V
Current - Continuous Drain (Id) @ 25°C 7.6A Tc
Gate Charge (Qg) (Max) @ Vgs 18.7nC @ 10V
Rise Time 5ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 13V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 7.6A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 433pF
Drain to Source Resistance 500mOhm
Rds On Max 500 mΩ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.33144 $0.66288
5,000 $0.31124 $1.5562
12,500 $0.30113 $3.61356
25,000 $0.29102 $7.2755

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