IPD50R650CEBTMA1

new-10%

Manufacturer part number:IPD50R650CEBTMA1

Manufacturer:Infineon Technologies

Description:MOSFET N CH 500V 6.1A PG-TO252

Case Package:SOT-23

Datasheet:IPD50R650CEBTMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Series	CoolMOS™
Pbfree Code	no
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	47W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	650m Ω @ 1.8A, 13V
Vgs(th) (Max) @ Id	3.5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	342pF @ 100V
Current - Continuous Drain (Id) @ 25°C	6.1A Tc
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	13V
Vgs (Max)	±20V
JEDEC-95 Code	TO-252AA
Drain Current-Max (Abs) (ID)	6.1A
Drain-source On Resistance-Max	0.65Ohm
Pulsed Drain Current-Max (IDM)	19A
DS Breakdown Voltage-Min	500V
Avalanche Energy Rating (Eas)	102 mJ
RoHS Status	ROHS3 Compliant