SUD40N02-3M3P-E3

new-10%

Manufacturer part number:SUD40N02-3M3P-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 20V 24.4A TO252

Case Package:SOT-23

Datasheet:SUD40N02-3M3P-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	3.3mOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	3.3W Ta 79W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.3W
Case Connection	DRAIN
Turn On Delay Time	40 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.3m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6520pF @ 10V
Current - Continuous Drain (Id) @ 25°C	24.4A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs	160nC @ 10V
Rise Time	30ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	33 ns
Turn-Off Delay Time	67 ns
Continuous Drain Current (ID)	24.4A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	40A
Drain to Source Breakdown Voltage	20V
Pulsed Drain Current-Max (IDM)	100A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free