IRF7410GTRPBF

new-10%

Manufacturer part number:IRF7410GTRPBF

Manufacturer:Infineon Technologies

Description:MOSFET P-CH 12V 16A 8-SOIC

Case Package:SOT-23

Datasheet:IRF7410GTRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	ULTRA LOW RESISTANCE
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Turn On Delay Time	13 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7m Ω @ 16A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	8676pF @ 10V
Current - Continuous Drain (Id) @ 25°C	16A Ta
Gate Charge (Qg) (Max) @ Vgs	91nC @ 4.5V
Rise Time	18ns
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	300 ns
Turn-Off Delay Time	271 ns
Continuous Drain Current (ID)	16A
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	0.007Ohm
Drain to Source Breakdown Voltage	-12V
Pulsed Drain Current-Max (IDM)	65A
Height	1.4986mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant