IPD60R380E6BTMA1

new-10%

Manufacturer part number:IPD60R380E6BTMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-Ch 650V 10.6A DPAK-2

Case Package:SOT-23

Datasheet:IPD60R380E6BTMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~155°C TJ
Packaging	Bulk
Published	2013
Series	CoolMOS™
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	83W Tc
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	380m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id	3.5V @ 300μA
Input Capacitance (Ciss) (Max) @ Vds	700pF @ 100V
Current - Continuous Drain (Id) @ 25°C	10.6A Tc
Gate Charge (Qg) (Max) @ Vgs	32nC @ 10V
Rise Time	9ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	56 ns
Continuous Drain Current (ID)	10.6A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	650V
Avalanche Energy Rating (Eas)	210 mJ
FET Feature	Super Junction
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant