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IPD60R400CEAUMA1

IPD60R400CEAUMA1

IPD60R400CEAUMA1

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 400m Ω @ 3.8A, 10V ±20V 700pF @ 100V 32nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

IPD60R400CEAUMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series CoolMOS™ CE
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 112W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 400m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 300μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 100V
Current - Continuous Drain (Id) @ 25°C 14.7A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.4Ohm
Pulsed Drain Current-Max (IDM) 30A
Avalanche Energy Rating (Eas) 210 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.57159 $1.14318
5,000 $0.54615 $2.73075
12,500 $0.52798 $6.33576
IPD60R400CEAUMA1 Product Details

IPD60R400CEAUMA1 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 210 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 700pF @ 100V is its maximum input capacitance.Peak drain current is 30A, which is the maximum pulsed drain current.In addition to 600V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IPD60R400CEAUMA1 Features


the avalanche energy rating (Eas) is 210 mJ
based on its rated peak drain current 30A.


IPD60R400CEAUMA1 Applications


There are a lot of Infineon Technologies
IPD60R400CEAUMA1 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies

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