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IPD60R600P6ATMA1

IPD60R600P6ATMA1

IPD60R600P6ATMA1

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 600m Ω @ 2.4A, 10V ±20V 557pF @ 100V 12nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

IPD60R600P6ATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series CoolMOS™ P6
Published 2008
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 63W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 2.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 200μA
Halogen Free Not Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 557pF @ 100V
Current - Continuous Drain (Id) @ 25°C 7.3A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 7.3A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 30V
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.6Ohm
Height 2.41mm
Length 6.73mm
Width 6.22mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.65723 $1.31446
5,000 $0.62798 $3.1399
12,500 $0.60708 $7.28496
IPD60R600P6ATMA1 Product Details

IPD60R600P6ATMA1 Overview


The maximum input capacitance of this device is 557pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 7.3A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 33 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 11 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 600V power supply, it is capable of handling a dual voltage maximum.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.

IPD60R600P6ATMA1 Features


a continuous drain current (ID) of 7.3A
the turn-off delay time is 33 ns
a threshold voltage of 4V


IPD60R600P6ATMA1 Applications


There are a lot of Infineon Technologies
IPD60R600P6ATMA1 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

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