Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IPD90N04S304ATMA1

IPD90N04S304ATMA1

IPD90N04S304ATMA1

Infineon Technologies

Single N-Channel 40 V 3.6 mOhm 60 nC OptiMOS? Power Mosfet - TO-252-3-11

SOT-23

IPD90N04S304ATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series OptiMOS™
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 136W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.6m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 90μA
Input Capacitance (Ciss) (Max) @ Vds 5200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 90A
Drain-source On Resistance-Max 0.0036Ohm
Pulsed Drain Current-Max (IDM) 360A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 260 mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.718784 $0.718784
10 $0.678099 $6.78099
100 $0.639716 $63.9716
500 $0.603505 $301.7525
1000 $0.569345 $569.345

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News