IPD90N04S304ATMA1

new-10%

Manufacturer part number:IPD90N04S304ATMA1

Manufacturer:Infineon Technologies

Description:Single N-Channel 40 V 3.6 mOhm 60 nC OptiMOS? Power Mosfet - TO-252-3-11

Case Package:SOT-23

Datasheet:IPD90N04S304ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Reference Standard	AEC-Q101
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	136W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.6m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 90μA
Input Capacitance (Ciss) (Max) @ Vds	5200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	90A Tc
Gate Charge (Qg) (Max) @ Vgs	80nC @ 10V
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	90A
Drain-source On Resistance-Max	0.0036Ohm
Pulsed Drain Current-Max (IDM)	360A
DS Breakdown Voltage-Min	40V
Avalanche Energy Rating (Eas)	260 mJ
RoHS Status	ROHS3 Compliant