IPI120N04S302AKSA1

new-10%

Manufacturer part number:IPI120N04S302AKSA1

Manufacturer:Infineon Technologies

Description:MOSFET OPTIMOS-T PWR-TRANS N-CH 40V 120A 2 mOhm

Case Package:SOT-23

Datasheet:IPI120N04S302AKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2007
Series	OptiMOS™
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	ULTRA LOW RESISTANCE
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	300W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.3m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 230μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	14300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	210nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	120A
Max Dual Supply Voltage	40V
Pulsed Drain Current-Max (IDM)	480A
Avalanche Energy Rating (Eas)	1880 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead