IPG20N06S2L35ATMA1

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Manufacturer part number:IPG20N06S2L35ATMA1

Manufacturer:Infineon Technologies

Description:MOSFET 2N-CH 55V 20A TDSON-8-4

Case Package:SOT-23

Datasheet:IPG20N06S2L35ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	Automotive, AEC-Q101, OptiMOS™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	*PG20N06
JESD-30 Code	R-PDSO-F
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power - Max	65W
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	35m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2V @ 27μA
Input Capacitance (Ciss) (Max) @ Vds	790pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Drain to Source Voltage (Vdss)	55V
Drain Current-Max (Abs) (ID)	20A
Drain-source On Resistance-Max	0.035Ohm
Pulsed Drain Current-Max (IDM)	80A
DS Breakdown Voltage-Min	55V
Avalanche Energy Rating (Eas)	100 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
RoHS Status	ROHS3 Compliant