ZXMN3A06DN8TA

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ZXMN3A06DN8TA

Manufacturer part number:ZXMN3A06DN8TA

Manufacturer:Diodes Incorporated

Description:MOSFET 2N-CH 30V 4.9A 8-SOIC

Case Package:SOT-23

Datasheet:ZXMN3A06DN8TA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	73.992255mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	35mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Powers
Voltage - Rated DC	30V
Max Power Dissipation	2.1W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	4.8A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.1W
Turn On Delay Time	3 ns
Power - Max	1.8W
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	35m Ω @ 9A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds	796pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.9A
Gate Charge (Qg) (Max) @ Vgs	17.5nC @ 10V
Rise Time	6.4ns
Fall Time (Typ)	9.4 ns
Turn-Off Delay Time	21.6 ns
Continuous Drain Current (ID)	6.2A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	4.9A
Drain to Source Breakdown Voltage	30V
Dual Supply Voltage	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	1 V
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free