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NTUD3170NZT5G

NTUD3170NZT5G

NTUD3170NZT5G

ON Semiconductor

NTUD3170NZT5G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

NTUD3170NZT5G Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SOT-963
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 1.5Ohm
Subcategory FET General Purpose Power
Max Power Dissipation 125mW
Terminal Form FLAT
Base Part Number NTUD3170NZ
Pin Count 6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 200mW
Turn On Delay Time 16.5 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 12.5pF @ 15V
Current - Continuous Drain (Id) @ 25°C 220mA
Rise Time 25.5ns
Fall Time (Typ) 80 ns
Turn-Off Delay Time 142 ns
Continuous Drain Current (ID) 280mA
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 400μm
Length 1.05mm
Width 850μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.527032 $0.527032
10 $0.497200 $4.972
100 $0.469057 $46.9057
500 $0.442506 $221.253
1000 $0.417459 $417.459
NTUD3170NZT5G Product Details

NTUD3170NZT5G        Description


   The half-dual N-channel power MOSFET is integrated with Schottky and packaged in DFN8 (SO8FL). These N-channel power MOSFET adopt a power-level solution in a common package to minimize board space, parasitic inductance and power loss. Double N-channel power MOSFET lead-free, halogen-free / BFR-free, in line with RoHS standards. Typical applications include DC-DC converters, system voltage rails and load points.


NTUD3170NZT5G      Features

? Dual N?Channel MOSFET

? Offers a Low RDS(ON) Solution in the Ultra Small 1.0 x 1.0 mm

Package

? 1.5 V Gate Voltage Rating

? Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely

Thin Environments such as Portable Electronics

? This is a Pb?Free Device


NTUD3170NZT5G      Applications

? General Purpose Interfacing Switch

? Optimized for Power Management in Ultra Portable Equipment

? Analog Switch



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