CSD88539ND

new-10%

Manufacturer part number:CSD88539ND

Manufacturer:Texas Instruments

Description:CSD88539ND datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available on our website

Case Package:SOT-23

Datasheet:CSD88539ND Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Contact Plating	Gold
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	540.001716mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Max Power Dissipation	2.1W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Base Part Number	CSD88539
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.1W
Turn On Delay Time	6 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	28m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	3.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	741pF @ 30V
Gate Charge (Qg) (Max) @ Vgs	9.4nC @ 10V
Rise Time	9ns
Drain to Source Voltage (Vdss)	60V
Fall Time (Typ)	4 ns
Turn-Off Delay Time	5 ns
Continuous Drain Current (ID)	15A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	6.3A
Drain-source On Resistance-Max	0.034Ohm
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	46A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
Height	1.75mm
Length	4.9mm
Width	3.91mm
Thickness	1.58mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free