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IPG20N06S415AATMA1

IPG20N06S415AATMA1

IPG20N06S415AATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

SOT-23

IPG20N06S415AATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount, Wettable Flank
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series Automotive, AEC-Q101, OptiMOS™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Max Power Dissipation 50W
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 15.5m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 20μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2260pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Drain to Source Voltage (Vdss) 60V
Continuous Drain Current (ID) 20A
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 0.0155Ohm
Avalanche Energy Rating (Eas) 90 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $7.726560 $7.72656
10 $7.289208 $72.89208
100 $6.876611 $687.6611
500 $6.487369 $3243.6845
1000 $6.120159 $6120.159

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