IPI100N08N3GHKSA1

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Manufacturer part number:IPI100N08N3GHKSA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 80V 70A 3-Pin(3+Tab) TO-262 Tube

Case Package:SOT-23

Datasheet:IPI100N08N3GHKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	OptiMOS™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Reach Compliance Code	compliant
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	100W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10m Ω @ 46A, 10V
Vgs(th) (Max) @ Id	3.5V @ 46μA
Input Capacitance (Ciss) (Max) @ Vds	2410pF @ 40V
Current - Continuous Drain (Id) @ 25°C	70A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Drain to Source Voltage (Vdss)	80V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	70A
Drain-source On Resistance-Max	0.01Ohm
Pulsed Drain Current-Max (IDM)	280A
DS Breakdown Voltage-Min	80V
Avalanche Energy Rating (Eas)	90 mJ