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SIE830DF-T1-E3

SIE830DF-T1-E3

SIE830DF-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 50A 10-POLARPAK

SOT-23

SIE830DF-T1-E3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 10-PolarPAK® (S)
Number of Pins 10
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2016
Series WFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count10
JESD-30 Code R-PDSO-N5
Number of Elements 1
Power Dissipation-Max 5.2W Ta 104W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.2m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 15V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 115nC @ 10V
Rise Time105ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 95 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 27A
Drain-source On Resistance-Max 0.0042Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 80A
Avalanche Energy Rating (Eas) 45 mJ
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:4098 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.915088$0.915088
10$0.863291$8.63291
100$0.814425$81.4425
500$0.768326$384.163
1000$0.724836$724.836

About SIE830DF-T1-E3

The SIE830DF-T1-E3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 30V 50A 10-POLARPAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SIE830DF-T1-E3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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