IPI180N10N3GXKSA1

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Manufacturer part number:IPI180N10N3GXKSA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 100V 43A 3-Pin(3+Tab) TO-262

Case Package:SOT-23

Datasheet:IPI180N10N3GXKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	71W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	71W
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	18m Ω @ 33A, 10V
Vgs(th) (Max) @ Id	3.5V @ 33μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 50V
Current - Continuous Drain (Id) @ 25°C	43A Tc
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	5 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	43A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	100V
Avalanche Energy Rating (Eas)	50 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free