FDA50N50

new-10%

Manufacturer part number:FDA50N50

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tube 105m Ω @ 24A, 10V ±20V 6460pF @ 25V 137nC @ 10V TO-3P-3, SC-65-3

Case Package:SOT-23

Datasheet:FDA50N50 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Factory Lead Time	17 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Weight	6.401g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	UniFET™
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Current Rating	48A
Number of Elements	1
Power Dissipation-Max	625W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	625W
Turn On Delay Time	105 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	105m Ω @ 24A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6460pF @ 25V
Current - Continuous Drain (Id) @ 25°C	48A Tc
Gate Charge (Qg) (Max) @ Vgs	137nC @ 10V
Rise Time	360ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	230 ns
Turn-Off Delay Time	225 ns
Continuous Drain Current (ID)	48A
Threshold Voltage	5V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	500V
Height	19.9mm
Length	15.6mm
Width	4.8mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free