Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2006
Series	PolarHT™ HiPerFET™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Power Dissipation-Max	700W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	700W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	24m Ω @ 60A, 10V
Vgs(th) (Max) @ Id	5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	8000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	185nC @ 10V
Rise Time	33ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	33 ns
Turn-Off Delay Time	130 ns
Continuous Drain Current (ID)	120A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.024Ohm
Drain to Source Breakdown Voltage	250V
Pulsed Drain Current-Max (IDM)	300A
Avalanche Energy Rating (Eas)	2500 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

IXFK120N25P

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