FDD6685

new-10%

Manufacturer part number:FDD6685

Manufacturer:ON Semiconductor

Description:FDD6685 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDD6685 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 17 hours ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	260.37mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	PowerTrench®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	20MOhm
Subcategory	Other Transistors
Voltage - Rated DC	-30V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Current Rating	-40A
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	52W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	52W
Case Connection	DRAIN
Turn On Delay Time	17 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	20m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1715pF @ 15V
Current - Continuous Drain (Id) @ 25°C	11A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs	24nC @ 5V
Rise Time	11ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±25V
Fall Time (Typ)	21 ns
Turn-Off Delay Time	43 ns
Continuous Drain Current (ID)	-40A
Threshold Voltage	-1.8V
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	-30V
Dual Supply Voltage	30V
Nominal Vgs	1.8 V
Height	2.39mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free