IPI47N10S33AKSA1

new-10%

Manufacturer part number:IPI47N10S33AKSA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 100V 47A 3-Pin(3+Tab) TO-262

Case Package:SOT-23

Datasheet:IPI47N10S33AKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2001
Series	SIPMOS®
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	175W Tc
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	25 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	33m Ω @ 33A, 10V
Vgs(th) (Max) @ Id	4V @ 2mA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	2500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	47A Tc
Gate Charge (Qg) (Max) @ Vgs	105nC @ 10V
Rise Time	23ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	63 ns
Continuous Drain Current (ID)	47A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	100V
Pulsed Drain Current-Max (IDM)	188A
Avalanche Energy Rating (Eas)	400 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead