IPI600N25N3GAKSA1

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Manufacturer part number:IPI600N25N3GAKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 250V 25A TO262-3

Case Package:SOT-23

Datasheet:IPI600N25N3GAKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	136W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	136W
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	60m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 90μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	2350pF @ 100V
Current - Continuous Drain (Id) @ 25°C	25A Tc
Gate Charge (Qg) (Max) @ Vgs	29nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	22 ns
Continuous Drain Current (ID)	25A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	250V
Drain-source On Resistance-Max	0.06Ohm
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead