IPL65R650C6SATMA1

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IPL65R650C6SATMA1

Manufacturer part number:IPL65R650C6SATMA1

Manufacturer:Infineon Technologies

Description:IPL65R650C6SATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IPL65R650C6SATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Weight	75.891673mg
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	CoolMOS™ C6
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-N5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	56.8W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	650m Ω @ 2.1A, 10V
Vgs(th) (Max) @ Id	3.5V @ 210μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	440pF @ 100V
Current - Continuous Drain (Id) @ 25°C	6.7A Tc
Gate Charge (Qg) (Max) @ Vgs	21nC @ 10V
Rise Time	9ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	80 ns
Continuous Drain Current (ID)	6.7A
Gate to Source Voltage (Vgs)	30V
Max Dual Supply Voltage	650V
Drain-source On Resistance-Max	0.65Ohm
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead