IPP023N08N5AKSA1

new-10%

Manufacturer part number:IPP023N08N5AKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-Ch 80V 120A TO220-3

Case Package:SOT-23

Datasheet:IPP023N08N5AKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Weight	6.000006g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
Series	OptiMOS™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	28 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.3m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	3.8V @ 208μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	12100pF @ 40V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	166nC @ 10V
Rise Time	16ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	62 ns
Continuous Drain Current (ID)	120A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	80V
Drain-source On Resistance-Max	0.0023Ohm
Pulsed Drain Current-Max (IDM)	480A
Avalanche Energy Rating (Eas)	674 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead