IPP041N12N3GXKSA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 900 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 13800pF @ 60V.This device conducts a continuous drain current (ID) of 120A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 70 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 480A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 35 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 120V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPP041N12N3GXKSA1 Features
the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 120A
the turn-off delay time is 70 ns
based on its rated peak drain current 480A.
IPP041N12N3GXKSA1 Applications
There are a lot of Infineon Technologies
IPP041N12N3GXKSA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
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- Micro Solar Inverter
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- DC/DC converters
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- Power Tools
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- Motor Drives and Uninterruptible Power Supples
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- Synchronous Rectification
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- Battery Protection Circuit
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- Telecom 1 Sever Power Supplies
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- Industrial Power Supplies
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- PFC stages, hard switching PWM stages and resonant switching
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