PHK31NQ03LT,518

new-10%

Manufacturer part number:PHK31NQ03LT,518

Manufacturer:Nexperia USA Inc.

Description:MOSFET N-CH 30V 30.4A 8-SOIC

Case Package:SOT-23

Datasheet:PHK31NQ03LT,518 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Surface Mount	YES
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2001
Series	TrenchMOS™
JESD-609 Code	e4
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	2 (1 Year)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	NICKEL PALLADIUM GOLD
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
Number of Elements	1
Power Dissipation-Max	6.9W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	6.9W
Turn On Delay Time	37 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.4m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	4235pF @ 12V
Current - Continuous Drain (Id) @ 25°C	30.4A Tc
Gate Charge (Qg) (Max) @ Vgs	33nC @ 4.5V
Rise Time	62ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	26 ns
Turn-Off Delay Time	54 ns
Continuous Drain Current (ID)	30.4A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	30V
Drain-source On Resistance-Max	0.0075Ohm
Drain to Source Breakdown Voltage	30V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free