IPP126N10N3GXKSA1 Overview

As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 70 mJ.A device's maximum input capacitance is 2500pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 58A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 24 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 100V, it supports maximum dual supply voltages.This device uses no drive voltage (6V 10V) to reduce its overall power consumption.

IPP126N10N3GXKSA1 Features

the avalanche energy rating (Eas) is 70 mJ
a continuous drain current (ID) of 58A
the turn-off delay time is 24 ns

IPP126N10N3GXKSA1 Applications

There are a lot of Infineon Technologies
IPP126N10N3GXKSA1 applications of single MOSFETs transistors.

• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
• Lighting, Server, Telecom and UPS.
• DC-to-DC converters