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IPP50R250CPHKSA1

IPP50R250CPHKSA1

IPP50R250CPHKSA1

Infineon Technologies

Trans MOSFET N-CH 500V 13A 3-Pin(3+Tab) TO-220AB

SOT-23

IPP50R250CPHKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Series CoolMOS™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 114W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 250m Ω @ 7.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 520μA
Input Capacitance (Ciss) (Max) @ Vds 1420pF @ 100V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Rise Time 14ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 13A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.25Ohm
DS Breakdown Voltage-Min 500V
RoHS Status RoHS Compliant

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