IPP65R074C6XKSA1

new-10%

Manufacturer part number:IPP65R074C6XKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-Ch 700V 57.7A TO220-3

Case Package:SOT-23

Datasheet:IPP65R074C6XKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	480.8W Tc
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	74m Ω @ 13.9A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1.4mA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	3020pF @ 100V
Current - Continuous Drain (Id) @ 25°C	57.7A Tc
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Rise Time	7ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	4 ns
Turn-Off Delay Time	56 ns
Continuous Drain Current (ID)	57.7A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	650V
Drain-source On Resistance-Max	0.074Ohm
Drain to Source Breakdown Voltage	700V
Pulsed Drain Current-Max (IDM)	151A
Avalanche Energy Rating (Eas)	915 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free