SUM90N08-4M8P-E3

new-10%

Manufacturer part number:SUM90N08-4M8P-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 75V 90A D2PAK

Case Package:SOT-23

Datasheet:SUM90N08-4M8P-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Packaging	Cut Tape (CT)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	4.8MOhm
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Subcategory	FET General Purpose Powers
Max Power Dissipation	3.75W
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.75W
Case Connection	DRAIN
Turn On Delay Time	23 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6460pF @ 40V
Current - Continuous Drain (Id) @ 25°C	90A Tc
Gate Charge (Qg) (Max) @ Vgs	160nC @ 10V
Rise Time	17ns
Fall Time (Typ)	8 ns
Turn-Off Delay Time	34 ns
Continuous Drain Current (ID)	90A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	75V
Pulsed Drain Current-Max (IDM)	240A
Avalanche Energy Rating (Eas)	245 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free