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NVMFS5C628NLT1G

NVMFS5C628NLT1G

NVMFS5C628NLT1G

ON Semiconductor

NVMFS5C628NLT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NVMFS5C628NLT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 38 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 12 hours ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e3
Pbfree Code yes
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Reach Compliance Code not_compliant
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.7W Ta 110W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.4m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 135μA
Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.0033Ohm
Pulsed Drain Current-Max (IDM) 900A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 565 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1,500 $0.81494 $0.81494
NVMFS5C628NLT1G Product Details

NVMFS5C628NLT1G Description


NVMFS5C628NLT1G is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 60V. The operating temperature of the NVMFS5C628NLT1G is -55°C~175°C TJ and its maximum power dissipation is 3.7W Ta. NVMFS5C628NLT1G has 8 pins and it is available in Tape & Reel (TR) packaging way. Avalanche Energy Rating (Eas) of NVMFS5C628NLT1G is 565 mJ and its Pulsed Drain Current-Max (IDM) is 900A.



NVMFS5C628NLT1G Features


  • Small Footprint (5x6 mm) for Compact Design

  • Low RDS(on) to Minimize Conduction Losses

  • Low QG and Capacitance to Minimize Driver Losses

  • NVMFS5C628NLWF ? Wettable Flank Option for Enhanced Optical Inspection

  • AEC?Q101 Qualified and PPAP Capable

  • These Devices are Pb?Free and are RoHS Compliant



NVMFS5C628NLT1G Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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