IPS10N03LA G

new-10%

Manufacturer part number:IPS10N03LA G

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 25V 30A IPAK

Case Package:SOT-23

Datasheet:IPS10N03LA G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-251-3 Stub Leads, IPak
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	52W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10.4m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2V @ 20μA
Input Capacitance (Ciss) (Max) @ Vds	1358pF @ 15V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	11nC @ 5V
Drain to Source Voltage (Vdss)	25V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
JEDEC-95 Code	TO-251AA
Drain Current-Max (Abs) (ID)	30A
Drain-source On Resistance-Max	0.0104Ohm
Pulsed Drain Current-Max (IDM)	210A
DS Breakdown Voltage-Min	25V
Avalanche Energy Rating (Eas)	80 mJ
RoHS Status	RoHS Compliant