IPT026N10N5ATMA1

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Manufacturer part number:IPT026N10N5ATMA1

Manufacturer:Infineon Technologies

Description:IPT026N10N5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IPT026N10N5ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mounting Type	Surface Mount
Package / Case	8-PowerSFN
Operating Temperature	-55°C~175°C TJ
Series	OptiMOS™5
Part Status	Active
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	214W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.6m Ω @ 150A, 10V
Vgs(th) (Max) @ Id	3.8V @ 158μA
Input Capacitance (Ciss) (Max) @ Vds	8800pF @ 50V
Current - Continuous Drain (Id) @ 25°C	27A Ta 202A Tc
Gate Charge (Qg) (Max) @ Vgs	120nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V

Quantity	Unit Price	Ext. Price
1	$6.26000	$6.26
500	$6.1974	$3098.7
1000	$6.1348	$6134.8
1500	$6.0722	$9108.3
2000	$6.0096	$12019.2
2500	$5.947	$14867.5

IPT026N10N5ATMA1 Description

IPT026N10N5ATMA1 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 100V. The operating temperature of IPT026N10N5ATMA1 is -55°C~175°C TJ and its maximum power dissipation is 214W Tc. IPT026N10N5ATMA1 has 3 pins and it is available in 8-PowerSFN packaging way.