IXTP8N65X2M

new-10%

Manufacturer part number:IXTP8N65X2M

Manufacturer:IXYS

Description:MOSFET N-CH 650V 4A X2 TO-220

Case Package:SOT-23

Datasheet:IXTP8N65X2M Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2015
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Power Dissipation-Max	32W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	550m Ω @ 4A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4A Tc
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	4A
RoHS Status	ROHS3 Compliant