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SIA440DJ-T1-GE3

SIA440DJ-T1-GE3

SIA440DJ-T1-GE3

Vishay Siliconix

MOSFET 40V [email protected] 12A N-CH

SOT-23

SIA440DJ-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code S-PDSO-N3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.5W Ta 19W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 26m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 20V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 21.5nC @ 10V
Rise Time 32ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 50A
Height 750μm
Length 2.05mm
Width 2.05mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.18772 $0.56316
6,000 $0.17628 $1.05768
15,000 $0.16484 $2.4726
30,000 $0.15683 $4.7049

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