IPU60R1K5CEBKMA1

new-10%

Manufacturer part number:IPU60R1K5CEBKMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-Ch 600V 3.1A IPAK-3

Case Package:SOT-23

Datasheet:IPU60R1K5CEBKMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Weight	343.085929mg
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tube
Published	2015
Series	CoolMOS™ CE
Pbfree Code	yes
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	28W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.5 Ω @ 1.1A, 10V
Vgs(th) (Max) @ Id	3.5V @ 90μA
Input Capacitance (Ciss) (Max) @ Vds	200pF @ 100V
Current - Continuous Drain (Id) @ 25°C	3.1A Tc
Gate Charge (Qg) (Max) @ Vgs	9.4nC @ 10V
Rise Time	7ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	3.1A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	5A
Pulsed Drain Current-Max (IDM)	8A
DS Breakdown Voltage-Min	600V
Avalanche Energy Rating (Eas)	26 mJ
RoHS Status	ROHS3 Compliant