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IPW65R037C6FKSA1

IPW65R037C6FKSA1

IPW65R037C6FKSA1

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tube 37m Ω @ 33.1A, 10V ±20V 7240pF @ 100V 330nC @ 10V TO-247-3

SOT-23

IPW65R037C6FKSA1 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series CoolMOS™ C6
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 500W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 500W
Turn On Delay Time 22 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 37m Ω @ 33.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 3.3mA
Input Capacitance (Ciss) (Max) @ Vds 7240pF @ 100V
Current - Continuous Drain (Id) @ 25°C 83.2A Tc
Gate Charge (Qg) (Max) @ Vgs 330nC @ 10V
Rise Time 32ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 140 ns
Continuous Drain Current (ID) 83.2A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Pulsed Drain Current-Max (IDM) 297A
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $17.88000 $17.88
30 $15.24300 $457.29
120 $14.11267 $1693.5204
510 $12.22867 $6236.6217
IPW65R037C6FKSA1 Product Details

IPW65R037C6FKSA1 Overview


A device's maximal input capacitance is 7240pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 83.2A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 140 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 297A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 22 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 650V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (10V).

IPW65R037C6FKSA1 Features


a continuous drain current (ID) of 83.2A
the turn-off delay time is 140 ns
based on its rated peak drain current 297A.


IPW65R037C6FKSA1 Applications


There are a lot of Infineon Technologies
IPW65R037C6FKSA1 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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