SPB80P06PGATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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SPB80P06PGATMA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
1999
Series
SIPMOS®
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
AVALANCHE RATED
Voltage - Rated DC
-60V
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
-80A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
4
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Number of Channels
1
Power Dissipation-Max
340W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
340W
Case Connection
DRAIN
Turn On Delay Time
24 ns
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
23m Ω @ 64A, 10V
Vgs(th) (Max) @ Id
4V @ 5.5mA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
5033pF @ 25V
Current - Continuous Drain (Id) @ 25°C
80A Tc
Gate Charge (Qg) (Max) @ Vgs
173nC @ 10V
Rise Time
18ns
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
30 ns
Turn-Off Delay Time
56 ns
Continuous Drain Current (ID)
-80A
Threshold Voltage
-3V
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
-60V
Drain to Source Breakdown Voltage
-60V
Max Junction Temperature (Tj)
175°C
Height
4.4mm
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
SPB80P06PGATMA1 Product Details
SPB80P06PGATMA1 Description
SPB80P06PGATMA1 can be described as a P-channel enhanced mode field-effect transistor. They consistently meet the highest standards of quality and performance standards in crucial specifications for the design of power systems like on-state resistance as well as the figure of merit properties.
SPB80P06PGATMA1 Features
Enhancement mode Avalanche rated Fast switching Dv/dt rated Pb-free lead-plating RoHS compliant, Halogen-free Qualified according to AEC Q101
SPB80P06PGATMA1 Applications
Motor control On-board charger DC-DC Consumer Logic level translators Power MOSFET gate drivers Other switching applications