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SCT3080KLGC11

SCT3080KLGC11

SCT3080KLGC11

ROHM Semiconductor

MOSFET NCH 1.2KV 31A TO247N

SOT-23

SCT3080KLGC11 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 21 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature 175°C TJ
Packaging Tube
Published 2018
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology SiCFET (Silicon Carbide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 165W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 165W
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 104m Ω @ 10A, 18V
Vgs(th) (Max) @ Id 5.6V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds 785pF @ 800V
Current - Continuous Drain (Id) @ 25°C 31A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 18V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 18V
Vgs (Max) +22V, -4V
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 31A
Drain to Source Breakdown Voltage 1.2kV
Pulsed Drain Current-Max (IDM) 77A
Max Junction Temperature (Tj) 175°C
Height 25.5mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $54.064480 $54.06448
10 $51.004226 $510.04226
100 $48.117195 $4811.7195
500 $45.393580 $22696.79
1000 $42.824132 $42824.132

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