Name: IRLL014NTRPBF
Brand: Infineon Technologies
SKU: IRLL014NTRPBF
Price: 0.86000 USD
Availability: InStock

new-10%

IRLL014NTRPBF

Manufacturer part number:IRLL014NTRPBF

Manufacturer:Infineon Technologies

Description:IRLL014NTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRLL014NTRPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1999
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	200mOhm
Additional Feature	AVALANCHE RATED, ULTRA LOW RESISTANCE
Voltage - Rated DC	55V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	2A
JESD-30 Code	R-PDSO-G4
Number of Elements	1
Power Dissipation-Max	1W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.1W
Case Connection	DRAIN
Turn On Delay Time	5.1 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	140m Ω @ 2A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	230pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2A Ta
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Rise Time	4.9ns
Drive Voltage (Max Rds On,Min Rds On)	4V 10V
Vgs (Max)	±16V
Fall Time (Typ)	2.9 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	2A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	16V
Drain Current-Max (Abs) (ID)	2A
Drain to Source Breakdown Voltage	55V
Dual Supply Voltage	55V
Recovery Time	61 ns
Nominal Vgs	2 V
Height	1.4478mm
Length	6.6802mm
Width	3.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

IRLL014NTRPBF Product Details

IRLL014NTRPBF IGBT Description

This reliable and efficient IGBT was published by Infineon using its HEXFET? technology, providing extremely low on-resistance and fast switching speed, and of course, the ruggedized design. Speaking of ratings, the IRLL014NTRPBF IGBT has a maximum continuous Drain current of 2.8 A (VGS @ 10 V). Besides, its Drain-to-Source breakdown voltage is rated at 55 V.