IRLL014NTRPBF

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IRLL014NTRPBF

Manufacturer part number:IRLL014NTRPBF

Manufacturer:Infineon Technologies

Description:IRLL014NTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRLL014NTRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1999
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	200mOhm
Additional Feature	AVALANCHE RATED, ULTRA LOW RESISTANCE
Voltage - Rated DC	55V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	2A
JESD-30 Code	R-PDSO-G4
Number of Elements	1
Power Dissipation-Max	1W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.1W
Case Connection	DRAIN
Turn On Delay Time	5.1 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	140m Ω @ 2A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	230pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2A Ta
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Rise Time	4.9ns
Drive Voltage (Max Rds On,Min Rds On)	4V 10V
Vgs (Max)	±16V
Fall Time (Typ)	2.9 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	2A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	16V
Drain Current-Max (Abs) (ID)	2A
Drain to Source Breakdown Voltage	55V
Dual Supply Voltage	55V
Recovery Time	61 ns
Nominal Vgs	2 V
Height	1.4478mm
Length	6.6802mm
Width	3.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free