STP7NK40Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STP7NK40Z Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
1Ohm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
400V
Technology
MOSFET (Metal Oxide)
Current Rating
5.4A
Base Part Number
STP7N
Pin Count
3
Lead Pitch
2.54mm
Number of Elements
1
Power Dissipation-Max
70W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
70W
Turn On Delay Time
15 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1 Ω @ 2.7A, 10V
Vgs(th) (Max) @ Id
4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
535pF @ 25V
Current - Continuous Drain (Id) @ 25°C
5.4A Tc
Gate Charge (Qg) (Max) @ Vgs
26nC @ 10V
Rise Time
15ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
12 ns
Turn-Off Delay Time
30 ns
Reverse Recovery Time
220 ns
Continuous Drain Current (ID)
5.4A
Threshold Voltage
3.75V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
400V
Dual Supply Voltage
400V
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.147440
$1.14744
10
$1.082491
$10.82491
100
$1.021218
$102.1218
500
$0.963413
$481.7065
1000
$0.908880
$908.88
STP7NK40Z Product Details
STP7NK40Z Description
With a voltage of 400V, the STP7NK40Z is a Zener-protected N-channel Power MOSFET from STMicroelectronics. It is packaged in the TO-220-3 format. These high-voltage devices are Zener-protected N-channel Power MOSFETs developed by STMicroelectronics using the SuperMESHTM technology, which is an improvement on the well-known PowerMESHTM. These devices are designed to ensure a high level of DV/DT capability for the most demanding applications, in addition to a significant reduction in on-resistance.