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STP7NK40Z

STP7NK40Z

STP7NK40Z

STMicroelectronics

STP7NK40Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STP7NK40Z Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1Ohm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 400V
Technology MOSFET (Metal Oxide)
Current Rating 5.4A
Base Part Number STP7N
Pin Count 3
Lead Pitch 2.54mm
Number of Elements 1
Power Dissipation-Max 70W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 70W
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1 Ω @ 2.7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 535pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.4A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 30 ns
Reverse Recovery Time 220 ns
Continuous Drain Current (ID) 5.4A
Threshold Voltage 3.75V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 400V
Dual Supply Voltage 400V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.147440 $1.14744
10 $1.082491 $10.82491
100 $1.021218 $102.1218
500 $0.963413 $481.7065
1000 $0.908880 $908.88
STP7NK40Z Product Details


STP7NK40Z Description


With a voltage of 400V, the STP7NK40Z is a Zener-protected N-channel Power MOSFET from STMicroelectronics. It is packaged in the TO-220-3 format. These high-voltage devices are Zener-protected N-channel Power MOSFETs developed by STMicroelectronics using the SuperMESHTM technology, which is an improvement on the well-known PowerMESHTM. These devices are designed to ensure a high level of DV/DT capability for the most demanding applications, in addition to a significant reduction in on-resistance.



STP7NK40Z Features


Extremely high DV/DT capability

100% avalanche tested

Gate charge minimized

Very low intrinsic capacitance

Zener-protected



STP7NK40Z Applications


Switching applications

Power Management

Industrial

DC-DC Conversion


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