IRF1324LPBF

new-10%

Manufacturer part number:IRF1324LPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 24V 195A TO262

Case Package:SOT-23

Datasheet:IRF1324LPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Supplier Device Package	TO-262
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2009
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	300W Tc
Power Dissipation	300W
Turn On Delay Time	17 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.65mOhm @ 195A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7590pF @ 24V
Current - Continuous Drain (Id) @ 25°C	195A Tc
Gate Charge (Qg) (Max) @ Vgs	240nC @ 10V
Rise Time	190ns
Drain to Source Voltage (Vdss)	24V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	120 ns
Turn-Off Delay Time	83 ns
Continuous Drain Current (ID)	340A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	24V
Input Capacitance	7.59nF
Drain to Source Resistance	1.65mOhm
Rds On Max	1.65 mΩ
Nominal Vgs	4 V
Height	9.65mm
Length	10.668mm
Width	4.826mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant