SI8417DB-T2-E1

new-10%

Manufacturer part number:SI8417DB-T2-E1

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 12V 14.5A 2X2 6MFP

Case Package:SOT-23

Datasheet:SI8417DB-T2-E1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-MICRO FOOT®CSP
Number of Pins	6
Supplier Device Package	6-Micro Foot™ (1.5x1)
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	2.9W Ta 6.57W Tc
Power Dissipation	2.9W
Turn On Delay Time	14 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	21mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2220pF @ 6V
Current - Continuous Drain (Id) @ 25°C	14.5A Tc
Gate Charge (Qg) (Max) @ Vgs	57nC @ 5V
Rise Time	25ns
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	240 ns
Turn-Off Delay Time	380 ns
Continuous Drain Current (ID)	-14.5A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-12V
Input Capacitance	2.22nF
Drain to Source Resistance	21mOhm
Rds On Max	21 mΩ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant