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IRF1405ZSTRRPBF

IRF1405ZSTRRPBF

IRF1405ZSTRRPBF

Infineon Technologies

MOSFET N-CH 55V 75A D2PAK

SOT-23

IRF1405ZSTRRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 7
Supplier Device Package D2PAK
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 230W Tc
Power Dissipation 230W
Turn On Delay Time 18 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.9mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4780pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time 110ns
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 82 ns
Turn-Off Delay Time 48 ns
Continuous Drain Current (ID) 75A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Input Capacitance 4.78nF
Drain to Source Resistance 4.9mOhm
Rds On Max 4.9 mΩ
Height 4.826mm
Width 9.65mm
Radiation Hardening No
RoHS Status RoHS Compliant

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