IRFB4212PBF

new-10%

Manufacturer part number:IRFB4212PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 18A TO-220AB

Case Package:SOT-23

Datasheet:IRFB4212PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2005
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Resistance	72.5mOhm
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Current Rating	18A
Number of Elements	1
Power Dissipation-Max	60W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	60W
Turn On Delay Time	7.7 ns
FET Type	N-Channel
Transistor Application	AMPLIFIER
Rds On (Max) @ Id, Vgs	72.5m Ω @ 13A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	550pF @ 50V
Current - Continuous Drain (Id) @ 25°C	18A Tc
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Rise Time	28ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	3.9 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	18A
Threshold Voltage	5V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	57A
Dual Supply Voltage	100V
Avalanche Energy Rating (Eas)	25 mJ
Recovery Time	62 ns
Nominal Vgs	5 V
Height	9.02mm
Length	10.6426mm
Width	4.82mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free