STD40N2LH5

new-10%

Manufacturer part number:STD40N2LH5

Manufacturer:STMicroelectronics

Description:MOSFET N-channel 25 V 40 A DPAK IPAK

Case Package:SOT-23

Datasheet:STD40N2LH5 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	STripFET™ V
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	11.8MOhm
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Base Part Number	STD40
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	35W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	35W
Case Connection	DRAIN
Turn On Delay Time	4.8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11.8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	700pF @ 20V
Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	6.3nC @ 5V
Rise Time	13.6ns
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±22V
Fall Time (Typ)	3.5 ns
Turn-Off Delay Time	17.6 ns
Continuous Drain Current (ID)	40A
Gate to Source Voltage (Vgs)	22V
Drain to Source Breakdown Voltage	25V
Pulsed Drain Current-Max (IDM)	160A
Avalanche Energy Rating (Eas)	110 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free