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2SK2847(F)

2SK2847(F)

2SK2847(F)

Toshiba Semiconductor and Storage

MOSFET N-CH 900V 8A TO-3PN

SOT-23

2SK2847(F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tube
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 85W Tc
Element Configuration Single
Power Dissipation 85W
Turn On Delay Time 60 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4 Ω @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2040pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A Ta
Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V
Rise Time 25ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 900V
Height 20mm
Length 15.9mm
Width 4.8mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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